I'm trying to etch TiO2 film by RIE.
There is 200nm thick photoresist(Shinetsu, SEPR-701) structure, under that there is bulk Anti reflection coat layer(Brewer science, DUV-252) of 100nm, followed by 200nm sputtered TiO2 layer on 1mm thick Quartz substrate.
Mixture of CF4, O2, Ar will be used.
When etching of TiO2 layer is finished, remaining polymers(possible photoresist and AR coating layer) will be treated with O2 plasma.
I think it will remove all the polymers, but is there any chance something might be remaining?
If so, What could be the remaining and how can I remove it?
You should be able to remove the remaining polymers after using oxygen plasma and rinsing into aceton bath and IPA for each with duration of 20 mins.
CF4 gas used in RIE, depending on the conditions, may cause redeposition of thin fluorocarbon polymer. The residual layer should be removed by adding a subsequent etch step with oxygen gas only (no CF4).
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