Hello
Recently, I tried to measure I-V curve of graphene FET device based on ion-gel
The material of ion-gel is P(VDF-HFP) + [EMI][TFSA]
Article "Cut and Stick" Rubbery Ion Gels as High Capacitance Gate Dielectrics
The thickness of ion-gel is roughly 500-800 nm
When I tried to measure I-V curve (I-V for graphene between source and drain, gate voltage is applied to nearby Au pad), I got this weird result... (file is attached
Is there anyone who knows why this thing happen and how to fix it?
Thanks