Hello

Recently, I tried to measure I-V curve of graphene FET device based on ion-gel

The material of ion-gel is P(VDF-HFP) + [EMI][TFSA]

Article "Cut and Stick" Rubbery Ion Gels as High Capacitance Gate Dielectrics

The thickness of ion-gel is roughly 500-800 nm

When I tried to measure I-V curve (I-V for graphene between source and drain, gate voltage is applied to nearby Au pad), I got this weird result... (file is attached

Is there anyone who knows why this thing happen and how to fix it?

Thanks

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