In CVD method based on 2 furnace, we start the growth by running the first furnace up to vaporization temperature and then we wait for optimized deposition process. After this, we shift to the annealing process. I want to know what the difference is between vaporization time and deposition time in CVD? Are they the same and mixed together or do all of the precursors start to vaporize immediately by reaching to optimized vaporization temperature?
As far as I know vaporization sets in before getting to the right temperature. Thus you still have your shutter in position, to make sure that none of the vapor gets to your substrate.
Once you get to the conditions needed (i.e. temperature and constant deposition rate) you open your shutter. Now the deposition onto the substrate starts and with that the deposition time. When you have reached your desired layer thickness, you again use the shutter and stop the deposition process, while vaporization still takes place and needs time to go to zero.
Thus vaporization time would be longer than deposition time. At least that's how I would see the difference.
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