I deposited YSZ films by PLD. What I see that at RT deposition, a maximum thickness was achieved which sharply decreases to the minimum value at 573 K. With increase in substrate temperature further a rise in thickness was observed. The first thought came to my mind that re-evaporation at high temperature (573 k). But it should follow the trend, means decrease in thickness with temperature. Then I carried out the elemental analysis using EDX which showed absence of Y in the film deposited at 573 K. What could be the reason for this behavior ?
If Y is missing from the films grown at 573 K, you can see for yourself that this growth is not optimized. Have you checked the EDX for films grown at other temperatures also? For PLD, an optimum growth condition is needed for a homogeneous, stoichiometric film with properties same as the bulk material. Unless you have a good quality film there is no point in comparing the thicknesses. Please go through the literature first to find out the optimum growth condition i.e. substrate temperature, background pressure, laser energy, frequency etc. this is absolutely must before going into any comparison about the thicknesses.
Yes, I have carried out EDX on other temperatures as well. Room temperature deposition is giving stoichiometric film as that of target whereas the temperature above 573 K showing presence of non-stoichiometric Y to Zr ratio. I understand the fact that stoichiometric film is the choice for optimum growth. I planed my tests after going through the available literature.
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