I was reading the paper "Analysis of Temporal Noise in CMOS Photodiode Active Pixel Sensor" but I am a bit puzzled about noise calculation during integration. In particular, can someone explain to me how did we come up with the so called varying capacitance induced conductance formula?
Aparna Sathya Murthy first of all thanks for your reply. I think I still don't get it. You say that the capacitance is constant during integration but that's not true and, in fact, its dependence on the photodiode voltage is the reason of the varying capacitance induced conductance. Am I right? My problem is that I don't understand where that formula comes from.
Kindly check https://www.researchgate.net/publication/258308493_Capacitance_and_conductance_dispersion_in_AlGaNGaN_heterostructure
In a CCD image sensor, temporal noise is primarily due to the photodetector shot noise and the output amplifier thermal and 1/f noise. CMOS image sensors suffer from higher noise than CCDs due to the additional pixel and column amplifier transistor thermal and 1/f noise. https://ieeexplore.ieee.org/document/896233
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