I am working on thermodynamic simulation in TCAD Sentaurus sdevice tool.

I am getting negative threshold voltage under the applied positive gate bias.

I_ON and I_OFF current is very less.

Can anyone tell us how to solve this issue?

Device parameter:

channel thickness=5nm

Width=44nm

Length=12nm

Spacer Length =7nm

Tox=2nm

Gate Work-function =4.2

Gate metal thickness=10nm

Physics section:

Physics{

*DriftDiffusion

Thermodynamic

Fermi

Hydrodynamic(eTemperature)

Recombination( SRH( DopingDep TempDependence ) Auger)

EffectiveIntrinsicDensity (BandGapNarrowing (OldSlotboom))

Mobility(

DopingDep

Enormal(IALMob Lombardi)

HighFieldSaturation)

}

--------------------------##------------------------

Coupled {Poisson Electron Hole Temperature eTemperature}