Hi

I am trying to simulate a N-doped nanowire with two schottky contacts and the model wont converge for positive applied potentials, no matter how hard I tried.

For negative applied potentials the simualtion converges perfectly and the results match the experiments very nicely.

So far I could observe the the calculations will converge for a doping concentration up to 1e14[1/cm^3] (but I need a higher one) or for barrier hights which are lower than 1.1 eV.

I tried to ramp up the doping concentration. (like in the example in the COMSOL applications libary),

ramp up the hight of the schottky barrier,

used exteamly low damping factors,

increasing the amount of newtonian iterations and try different solvers.

The NW material is CdS, the contacts are Pt (WF = 5.7eV), barrier hight ~>1.2 eV, doping concentration 1e16[1/cm^3]