Sentaurus TCAD channel doping diffusion?

18 June 2021 0 10K Report

i make nanosheet FET, channel doping is 1e16 boron and S/D doping 1e20 arsenic.

When only SDE is used, a normal doping profile is seen, but when SDEVICE is used, a strange phenomenon is found between the channel and S/D.

On the drain side, it seems that diffusion is normally toward the channel, but on the source side, diffusion occurs in the source direction.

The phenomenon is exacerbated by making the mesh coarse.

Why is this happening?

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