Dear all,

Currently, I am trying to replicate the simulation result of your paper entitled "Analytical modelling for the current–voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs", DOI: https://doi.org/10.1016/j.mee.2009.10.015

I am trying to simulate the DG structure of the same dimension in the Silvaco-ATLAS TCAD. However, my simulation result is not in agreement with that of the published simulation result.

Can I get any help from your end...!

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