How can we reduce the breakdown voltage drift of Insulated Gate Bipolar Transistor (IGBT) after 1000 hours of HTRB reliability test? For instance, the BVces dropped from 1590V to 1450V after HTRB.
...if you are asking for the countermeasures you have to take in production, a root-cause analysis is essential. It depends very strong on your device structure, what kind of Ions are exceeding, which process is responsible for that...?
There is always a trade-off: E.g. Phosphorus binds mobile ions but weakens humidity performance...
We previously added an additional protective layer to resolve the trade off. However, there is still a significant reduction on the BVces after 1000 hours
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(PDF) High Temperature Reverse Bias (HTRB) & Temperature Humidity Bias (THB) Reliability Failure Mechanisms and Improvements in Trench Power MOSFET and IGBT (researchgate.net)
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