Actually I want to simulate a p-n hetero-junction diode for gas sensing at higher temperature i.e. at 300 C with the help of Atlas using Silvaco tool. Therefore, the carrier concentration on the surface of the semiconductor will vary with the temperature. At room temperature it will be different & at 300 C it will be different one. So, I just want to know whether I have to calculate the carrier concentration at 300 C from the formulae p0=Nv*exp[-(EF-Ev)/kT] & then have to put it in the "Doping" statement of the Atlas or I have to just put the doping/carrier concentration in room temperature in the "Doping" statement just mentioning the temperature as 573 K (300 C) & the Simulator will automatically calculate the carrier concentration at 300 C by its own and simulate the device.
Also kindly mention whether I have to use "Giga" module for the simulation at high temperature almost at 300 C or not.
Kindly suggest a correct proposition.
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