For back gate I have decided to deposit Au over Si wafer. I have studied in papers, people generally use Cr, Ni, Ti as adhesion layer between wafer and metal. But no one mention reason for choosing a particular metal as adhesion layer. Someone please guide me with appropriate reason.
That depends on your specific conditions. Some times you worry about the diffusion of the metal into your system. For an electrical contact with Si, it is very common to use Ni and then rapid anneal it to form a silicide an have a better electric contact. Cr is easier to evaporate than Ti, but Ti usually gives better adhesion than Cr. On the other hand, Ti doesn't stick very good to SiNx. As I said, it depends on your specific conditions.
As adhesion layer on Si for a back gate, either would be fine so use whatever you have available.
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