I have fabricated a back-gated GFET (Graphene field effect transistor ). I have a four probe station. I want to measure transfer curves for my device.
I am not sure if I have connected the four probes in the right way.
I connected one probe coming from Source high to the metallic stage on which my sample is placed. The other probe from source low was connected on the surface of the device at a contact (which can be either considered as a source or drain, lets call it source). Two more probes are connected to the source high and source low of another source meter. The source high is connected to source and source low is connected to drain.
Simply, one probe on gate that is source high, two probes on source those are source high and source low, one probe to the drain that is source low. Am I doing it right?
http://home.iitk.ac.in/~ragupta/Term_Paper_Graphene_based_FETs.pdf
http://www.rle.mit.edu/nmeg/wp-content/uploads/2014/03/pdf113.pdf
https://arxiv.org/pdf/1011.0579.pdf
Hi,
Here is the schematic for MOSFET which you can use for your graphene FET. I had used the attached schematic successfully.
In the figure, for kiethley connections,
SH= Sense High
SL= Sense Low
FH= Force High
FL= Force Low
- Badges
- Science topic
- Similar topics
- Physical Sciences
- Materials Science
- Materials
- Carbon Materials
- Graphite
- Graphene