Dear Bablo,
welcome,
Potential induced degradation is due to the presence of sodium ions in the encapsulation glass where they can drift under electrostatic electric field caused by high negative or positive potentials of the solar cells relative to the frame potential which can be considered zero. Assuming high negative potential of the solar cell relative to metal frame the positive ions diffuse to the side surface of the solar cells and accumulate there. Through their field effect they build a conduction channel between the n and p side of the solar cells which is effectively a sort of reducing the shun resistance. This effect will lead to degradation of the output power of the cell with the time evolution.
This effect is reversible bu a negative potential such that one can restore the correct operation of the cell again.
So, qualitatively the effect will be similar in both materials but it may quantitatively different because of the difference in material properties.
Best wushesd
thank you Prof. Zekry. However, is there any relation with emitter type and thickness of active materials?
Potential-induced degradation (PID) is due to its detrimental impact on photo-voltaic (PV) module performance under field conditions. Both crystalline silicon (c-Si) and thin-film PV modules are susceptible to PID. I am attaching one review paper in which the authors gave a very nice explanation about the current status of PID research and future research paths. They also reviewed PID mechanisms in both c-Si and thin-film PV modules. I wish it might be useful for you
All the best
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