31 October 2021 3 452 Report

Group-IV elements doping in III-V behaves amphoteric: n-type if the dopants occupy the group-III sites and p-type if they occupy the group-V sites, which is not hard to understand.

My question is on a group-VI elements doping in III-V semiconductors. An example is Te doping in GaAs. Te atoms are known to occupy As sites and make GaAs n-type. When we excessively dope Te in GaAs, however, we observed that GaAs became p-type. I would guess that it happens as Te starts occupying Ga sites or interstitial sites.

First, has any of you observed this (p-type conductance from group-VI doping in III-V)?

Second, can anyone help me understand the mechanism?

Thanks in advance!

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