Hodgkin-Huxley model succeeded in recapitulating the behavior of ions by using a circuit model.

However, many thesis use a semi-experimental method to describe the gating variable:alpha and beta. Thus I'm wondering if we can make a simulator by exploiting the knowledge of detailed structual properties of channels and physics.

In other words, I want to calculate the gating variable g(V) (which appear in the equation:I=g(V)*(B-E)) without curve-fitting the raw data.

Is there anyone trying to do so? or is it already developed?

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