Hello,
I’m searching a method to calculate parasitic capacitance for a BIMOS transistor(Cgs: Cgate source,…..) with TCAD but until now I can’t find anything. Please can you help me or provide me with an idea if there is an option in TCAD to do that automatically .
I will be glad to answer me.
Best Regards,
SAOUD Mohamed
In TCAD using AC small signal analysis, you can extract parasitic components such as Cgs, Cgd etc. Perform AC analysis at a frequency say 1MHz. TCAD will show small signal data with all conductances and capacitances associated with each node. The capacitance value you will get it consist of two part- 1) parasitic and 2) intrinsic .
In subthreshold region i.e off state, intrinsic capacitances are negligible, So only parasitic component will be present.
okay,but how ican determine a fix value to Cgs for example i am thinking to take Cgs when vgs=0
To get that you can plot cgs vs. Vgs plot. Search for the portion in subthreshold region where cgs value is minimum or almost constant . Basically that gives parasitic value of cgs at that gate bias.
can you explain more please.And for the case of SCR(Sillicon contorlled rectifier) how i can determine the whole capacitances.Have you some documents...Thank you
Sorry, I have no ideas about SCR. Those are the basic things related to extract capacitances particularly in case of MOS device.
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