I want to fit J-V curve in full OLED using the below equation. However, that equation is designed for a unipolar device. d in that case is distance between electrodes. In the case of full device, it will be more complicated. How should I change that equation to suitable for full device J-V curve?
Dear N.
Welcome!
Hope you are well and every thing is okay with you !
The conduction mechanism in the LEDs follows that of the pin diode model. It is characterized by double injection form the two end regions of the pin dioes. That is the p+ layer injects hole and n+ layer injects electrons in the i-rejion.
The injected electrons and holes recombine with each other. So, the current will be limited by the recombination rate in the i-region.
Assuming the injected charges are Q= Qn=Qp as the device will be a bipolar device,, and the lifetime of the carriers is Tau, then the current will be
I= Q/ Tau,
Q= A q n w/Tau,
A the area,
q electron charge,
n the excess electron concentration in the i-region,
w the width of the I-region
The excess electron concentration is related to the forward applied voltage by
n= ni exp Vjt/2Vt,
Ni is the intrinsic concentration,
Vjt is the total junction of voltage
This will be divided by 2 to get the junction voltage as we have two junctions
the p-i and the n-i junctions which are assumed identical.
The the total junction voltage Vjt = V- IRs,
V is the applied voltage and Rs is the ohmic series resistance of the diode.
It is the resistance of its semicondcutor layers.
So you can fit your results with such an I-V relation.
Please try and report how much this model is applicable.
Best wishes
Dear N.
Welcome!
Hope you are well and every thing is okay with you !
The conduction mechanism in the LEDs follows that of the pin diode model. It is characterized by double injection form the two end regions of the pin dioes. That is the p+ layer injects hole and n+ layer injects electrons in the i-rejion.
The injected electrons and holes recombine with each other. So, the current will be limited by the recombination rate in the i-region.
Assuming the injected charges are Q= Qn=Qp as the device will be a bipolar device,, and the lifetime of the carriers is Tau, then the current will be
I= Q/ Tau,
Q= A q n w/Tau,
A the area,
q electron charge,
n the excess electron concentration in the i-region,
w the width of the I-region
The excess electron concentration is related to the forward applied voltage by
n= ni exp Vjt/2Vt,
Ni is the intrinsic concentration,
Vjt is the total junction of voltage
This will be divided by 2 to get the junction voltage as we have two junctions
the p-i and the n-i junctions which are assumed identical.
The the total junction voltage Vjt = V- IRs,
V is the applied voltage and Rs is the ohmic series resistance of the diode.
It is the resistance of its semicondcutor layers.
So you can fit your results with such an I-V relation.
Please try and report how much this model is applicable.
Best wishes
Check the classical book "Current injection in solids" by Murray A. Lampert. There you will find answers to many questions related to the unipolar and bipolar SCLC mechanisms.
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