I'm currently doing a set of simulations on penetration depth of ions in electronic devices, and I'm wondering whether or not the crystal structure of the materials in the backend (dielectrics, metallization) in a typical Silicon process has an effect on stopping power of these compounds. The most impact I'd expect for Silicon dioxide, which in the case of PVD and/or CVD deposition tends to be pretty amorphous, while a thermal oxide seems to be much closer to a crystalline form. Now the question is how much of a difference should I expect? My gut feeling is that for a deposited amorphous oxide layer, the density should be somewhat less than that of a perfect crystal. But is the difference large enough to actually make a difference in stopping power of the oxide?
I'm aware that stopping of ions in itself is somewhat of a stochastic process such that the resulting range of the ions is subject to a statistical distribution already on its own, therefore I wonder if it actually would make a noticeable change if the density of the oxide layer would lower by a few percent...