I had found a lot of literature about the doping of different elements into semiconductor materials for enhancing photocatalytic activity. I had also found some literature about doping of one semiconductor metal oxide into another semiconductor oxide material. The doping terminology is true? Is that composite?
You can find detailed answers to your question by reading the following literature:
1) Limits to doping in oxides J. Robertson and S. J. Clark, Phys. Rev. B 83, 075205
2) Limits to Doping of Wide Band Gap Semiconductors, Chem. Mater., 2013, 25 (15), pp 2924–2926
In short and very crude, yes you can dope an oxide semiconductor with another oxide. When the concentration of the dopant increases beyond a value then you start forming compounds, or oxide mixtures or composite depending on the chemistry and the application. For photocatalysts, you dope with aliovalent ions to engineer the bandgap, or form a composite electrode to channel the charge transport. Sometimes, a mixture of binary phases may be detrimental as the interface could act as charge recombination sites.
This concept, however, only works for very small amounts of doping and if the two oxides have similar crystal structure - going into the at% range often produces lattice defects such as stacking faults, inversion domains etc.
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