I have J-V characteristics (both dark and light) for some solar cells. These devices are fabricated under different conditions and I would like to compare the mobility at each instance. Is it possible to extract mobility from JV curves. Or else can we compare the mobility as to which is higher, from the JV curves?
Thanks.
Yoy can try the Mott Gurnay law to estimate mobility if you are in SCLC regime
you can use a least square method with a function J(V) or V(J) that contain a parameter related to mobility.
Dear Waranatha,
Again on the researchgate with challenging question. So, let me start with some concepts that may lead to the answer of your question. Mobility is the ability of mobile charge carriers to drift under the effect of the electric field. So, they are related to the conductance of the material or its resistance.
So, we have to ask about the conduction mechanisms of mobile charges under dark condition. So, we have to express the dark current in terms of the the physical and technological parameters of the device. In the drift diffusion model the reverse saturation current J0 is proportional to the diffusion coefficient D of minority carrier which is according to the Einstein relation D= mu * Vth where vth is the thermal equivalent voltage kT/q. So, the mobility has direct effect on the reverse saturation current. Also, At, high currents the voltage drop on the semiconductor region and an IR drop appears. If the mobility is higher this IR drop will be lower.
Also, impedance measurement at reverse bias will give an indication on the semiconductor layer resistance and hence the mobility.
wish you success.
Hi,
I agree with Abdelhalim.
Also, I have come across reports wherein they have used Admittance spectroscopy to estimate the mobility ( a SCLC regime required though). See if you get a hang of literature to carryout the experiment.
All the best.
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