I was doing researches on BTO CL
and found 2 peaks at 1.65 and 1.79 eV
I thought they are energy levels introduced by dopants
(I was thinking they were formed by Ca and Y)
but my friend says energy levels introduced by dopants are considered as defect, like energy level form by distortion, if they are above/below 0.5eV from valence and conduction bands. I am wondering if this is right.
and the band gap is 2.53ev
thank you
Because of doping shallow level defects state are formed near valance or conduction band. These defect levels can improve conductivity.
Yes, generally doping can induce extra defects in the crystal structure and thus change the position of energy level. The perturbation of energy level values depends on the amount and type of impurity added.
Azhar Ali Haidry
I am confused which information I should adopt between
1. for BaTiO3 in MLCC deep level doping is done for trap site
2. lattice distortion, electron-phonon coupling, polaron etc affect the CL spectrum.
how would you consider where 2 peaks at 1.65 and 1.79 eV are from?
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