I am using vapor deposition for amino-silanization by APTES (3-aminopropyltriethoxysilane). I have noticed in literature that the 99.5% purity APTES is used as received for vapor deposition in silicon wafers under N2 in desiccator. However, when Argon is used, APTES is distilled first prior to vapor deposition. is it really necessary to distill APTES for vapor deposition under N2 or Argon? Any help is appreciated.

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