I think TCAD softwares  use the same model as Si for device simulations.Although we can modify the parameter file but certain surface related effects like Fermi level pinning are not taken care of and this may lead to unexpected results that will be difficult to replicate in an experiment.

Thanks Prashanth. As per your answer same model is applied , but the required parameter file should be activated during simulation. 

For Ge MOSFET simulation in TCAD there is not different models are available than the Si mosfet so models are same for both the mosfet. For Ge mosfet you should define the parameters like energy band gap, affinity, electron and hole effective mass, mobility, carrrier lifetime  etc. on the material statement..........

To Sumit Kale,

I am new to Synopis TCAD, Could you please give me the details  steps as how to define the parameters for Ge material, which file need to edit, could you please give me a clear idea.

Thanks,

Dear Andy Kale

 In Sentaurus the Germanium.par file is already exist. you have to add that to your simulation and edit the required parameters as per your design. The parameters as described by Sumit Kale.

Regards

S K Mohapatra

I can see the Germanium.par file. It has all the parameters for Ge material. In the Physics part, what model should be used for Ge diode? In case of Silicon  SRH recombination is used, what would the correct model for Ge, how to modify the Physics part?

Dear A Paul

   Same model will be used for Ge. Only include the parameter file Ge.par. If you want to modify you can modify in material statement. Physics part means ....... I think you giving the model in sdevice (.des) file. There you include .param. After adding the material Ge, the .par you can modify in your working directory.

Regards

S K Mohapatra

Can SRH recombination be used in Ge. For Si diode SRH recombination is used. What model is right for Ge?

Dear A Paul

As per Prashanth Paramahans Manik answer to me same model is applicable for Ge. I have not worked using Ge. But I have used GaAs material with same model.

Regards

Yes. Models applied to Si can be applied to Ge as well. Before running the 'sdevice' file, one must not forget to add the materials to the 'sdevice.par' (default name). The band gap and other parameters are taken into account once the material is added to the project.

However, sometimes, running a Si device and a Ge device in one project may cause confusion if there are a no. of files and hence, it is better to 'Save As' the .par files in different names for different devices.

 Thanks for your answer.