For ex., in a solar cell with Cs-doped MAPbI3 as absorber, increase in device efficiency is largely due to 14% and 18% improvements in short-circuit current density and open-circuit voltage, respectively, compared to those of the device with MAPbI3.
Dear Boualem,
You can read the following reference, which contain very important informations about your question
Sharma B. L., and Purohit R. K., "Semiconductor heterojunctions", First edition, pergamon press, Oxford, New York. 1974.
Dear colleagues thanks very much for the fruitful discussion. Aim reached!
Again the floor is yours! "on your project -Prov 4 PVs-
To optimize optical and electrical properties of MAPbI3 perovskite (well-known as a light absorber with a low bandgap of 1.5eV and high extinction coef.) while maintaining the fundamental characteristics of this material, one can replace a fraction of MA ions with alkali metal cations, like Cs, for ex. Could 2 n/p doped Cs-MAPbI3 heterojunction be juxtaposed?
The performance of functioning inverted structures can be improved by enhancing the morphology of perovskite films and developing new device architectures. Then, which conditions should be respected to get better device performances?
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