In what way a electrochemical potential u(x) depends on coordinate x in the semiconductor with graded dopant concentration Nd(x)?

Viktor Vladimir Chistyakov @Viktor-Chistyakov

21 February 2024 1 7K Report

The dopant concentration is Nd(x) in transiton domain 0

The impurity contributes to the density of states. Therefore, I would use the well-known expression n = F1/2(mu)R0. Where the carrier concentration is n, F1/2 is the Fermi integral, mu is the chemical potential of electrons, and R0 is the density of states at the point with coordinate x.

I think so. (c)

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