12 December 2012 0 7K Report

I use LAO as the substrate and Pt as the bottom and top electrode layer. The configuration of my film is Pt/ferroelectric layer/Pt/LAO. However, the interface of ferroelectric layer/Pt is very poor due to their large lattice mismatch. So I deposited Pt bottom electrode below the LAO: Pt/ferroelectric layer/LAO/Pt. In this case, the ferroelectric layer can be well grown on LAO epitaxially. But I don’t know whether we can add the E field on our ferroelectric layer since there is the LAO substrate isolating the bottom SRO and ferroelectric layer! I am worried about this point since LaAlO3 is an insulator and its thickness is much larger than our ferroelectric films. It should be noted that our ferroelectric film is also insulating

If the electric field can still be added on our ferroelectric layer, how can we fix our samples on the sample holder? In my opinion, we need to attach the Ag point and wires on the top and bottom Pt electrode layer to add the E. If we fix the bottom electrode on the sample holder, will the wire and Ag point be destroyed by the sample holder?

Thank anybody for your help in advance!

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