In solar cell applications I need to model PN junction, In lumerical's FDTD we can create new material in material database, there we can make any material with desired np density (electron hole density), but after that my simulation diverges due to material gain I suppose.
Are you just wanting to modify the dielectric properties of the doped materials or do you want to handle the nonlinear response of the junction? Predicting the PN junction from doping requires physics that the conventional FDTD does not incorporate. Instead, you can modify the permittivity as well as build in the nonlinear response that the PN junction would exhibit. For example, a very simple technique to include a diode at a particular point on the grid is to update the electric field, but then go back and limit the maximum value of the electric field. You could just set E = 0 when E is positive after the update. You can, of course, also get much more sophisticated than this for better accuracy.
sir I want to calculate the number of generated charge carriers with respect to plane wave excitation, since doping affects the number of charge carriers thats the reason I want to incorporate doping in Lumerical FDTD.
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