I want know that there is any diffusion take place of Platinum into the thin film at these higher temperatures?
Hello. We deposit Ta2O5 on silicon substrate.
About temperature. There are simplest way to create SiO2 is termal oxidation. 800 C is standart temperature to obtain SiO2. Moreover, the size of obtained Sio2 is known function of temperature of oxidation and time of oxidation with high precision. I think, you can find this calculation in network.
When we use Ta2O5 we found optimal temperature if Si substrate is 180-220 C. With this temperature Ta2O5 was very good and strong.
If interesting, we described out methot of growing in jounrnals
Best Regards.
If you have simply deposited Platinum on silicon, and then using such a metallized substrate at a high temperature, definitely it is well known that it will not be stable at high temperatures of 650 to 750 deg. C. Because platinum diffuses into silicon easily and forms platinum silicide. T
here are many excellent papers in the literature on how to metallize silicon substrate with Platinum to form stable electroding layers which can withstand high temperatures upto 750 deg C in oxidising atmosphere. Enclosing a paper which may be useful to you on this subject
K. Sreenivas
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