I am etching under KOH at 520°C for 15 mins. After etching I can easily study the C-face under microscope and locate the dislocations as hexagonal features.
But the Si-face under microscope looks completely stained and it is impossible to observe anything? Why is it so?
Dear Dr. Gourav Sen,
I suggest you to have a look at the following papers:
-Threading dislocation classification for 4H-SiC substrates using the KOH etching method
Yingxin Cui, Xiaobo Hu, Xuejian Xie and Xiangang Xu
CrystEngComm, Issue 7 (2018)
Available at: https://pubs.rsc.org/en/content/articlelanding/2018/ce/c7ce01855j/unauth#!divAbstract
-The Effect of Surface Roughness on SiC by Wet Chemical Etching
Jae-Kwan Kim, Y.-J. Jo, S.-C. Han, H.-Y. Lee ,J.-M. Lee
Journal of the Korean Institute of Metals and Materials 47(11):748-753 (2009)
Available on RG at: https://www.researchgate.net/publication/289005434_The_Effect_of_Surface_Roughness_on_SiC_by_Wet_Chemical_Etching
-Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation
Tiago S. Monteiro, Pamakstys Kastytis, Luis M. Goncalves, Graca Minas and Susana Cardoso
Micromachines, 6, 1534-1545 (2015)
Available at: www.mdpi.com
Best regards, Pierluigi Traverso
Hi
During the etching process the Silica phase may undergo any reaction like silicate and something other possible way.. But the C phase did not.
Dear Dr. Gourav, I completely agree with your observations, and the very fact mentioned is also correct that the etching rates are different for the Si-face and the C-face with the former being much slower.
I would like to tell you that etch rates and surface roughness are independent observations and I would like to point out that, even with higher etching rates, C-face has a much lower value of average roughness as compared to the Si-face is a known fact for SiC.
This has also been theoretically calculated and also experimentally observed fact.
You may want to refer to
Yutaka Miura et al 2008 ECS Trans. 13 39
Article Etching Rate Behavior of 4H-Silicon Carbide Using Chlorine T...
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