I am etching SiC polished wafers using KOH. After etching I find the Si face of the wafer very stained but the C face very reflective why is it so?

I am etching under KOH at 520°C for 15 mins. After etching I can easily study the C-face under microscope and locate the dislocations as hexagonal features. But the Si-face under microscope...

08 April 2020 3,771 6 View