How would be the parasitic elements of a bidirectional power switch made from back-to-back MOSFETs?

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Mohammed Setti

My multilevel inverter topology includes both unidirectional and bidirectional power switches, I pretty understand the switching behavior of each single MOSFET, how to determine the Ig with respect to Qg, Vgs and fsw, also the total Rg (internal + external) in order to limit the current sourced/sunk from the gate driver and how to predict the fall/rise time to prevent shoot-through...

It would be evident to select a bidirectional gate driver with a current capability equal 2 times of that of a unidirectional one, but this solution is not possible for me since it requires higher voltage input rail and different PDD (propagation delay difference) which may complicate the control design.

FYI, I am using Infineon CoolMOS CFD7 MOSFETs (IPP60R070CFD7) driven by an optocoupler gate driver (avago HCPL-3140)

Himadri Nath Saha

https://www.queryoverflow.gdn/query/how-do-the-parasitic-elements-behave-in-a-bidirectional-power-switch-made-from-back-to-back-mosfets-26_360150.html