I want to deposit multilayered thin films of Co and Au on Si. Will it make any difference if I choose p-type or n-type Si as substrate? Will the effect be more apparent if I choose some other elements for deposition instead of Co and Au ?
Siddharth, Using e-beam system, we need only supper smooth substrate for multilayer fabrication., we don't worry about the p-type and n-type as far as from structural point of view of the multilayer stack. Regarding your property that you are interested, then look which substrate is good for your study.
I believe you should first determine which process you want to use. In case of electrodeposition, there will be a large difference already in the potentials involved in the process. Using p-Si, normally, an ohmic contact will be formed at the interface junction of substrate and electrolyte. For n-Si, a Schottky barrier is formed. Obviously, such values will vary related to the electrolyte used.
Siddharth, Using e-beam system, we need only supper smooth substrate for multilayer fabrication., we don't worry about the p-type and n-type as far as from structural point of view of the multilayer stack. Regarding your property that you are interested, then look which substrate is good for your study.
Hi,
It depends on what device or structure you want to fabricate.
If it is a structure or a device that you're going to probe and measure current, you might want to insulate the substrate with a thick oxide. Alternately if you're going make a structure like MTJ or spin valve and if you're going to probe your device using only top contacts, then the current path will not be through substrate and hence the substrate is irrelevant.
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