Dear colleagues,
Currently I'm trying to simulate device processing which involve a spin on doping process (rather than diffusion or ion implantation). I have read the Sentaurus TCAD user guide and found that it can be done by:
1. Predeposition : Specifying doping concentration (using "deposit" command)
2. Drive in: Using "diffuse" command.
However, I'm not sure how to define the SOD liquid. I will be glad to hear any hint(s) or suggestion(s)
Regards
Dear Gilang,
welcome,
Spin on coating is existing within the the lithography process where one spin on coat the photoresist. As for the the predeposition phse in doping it is a diffusion process with accumulating the doping atoms on the surface of the wafer. such that the diffusion process can be considered running with with constant doping concentration at the surface.
Best wishes
Dear Mr. Zekry,
Thank you for your answer. There is another things comes in my mind: In simulating spin on doping using Sentaurus, do we have to define/specify the SOD liquid itself (maybe by adding the SOD properties on Sentaurus' database)? or will it be enough just by specifying the dopant and concentration (e.g. specifiying "phosphorus/boron" at concentration of "3e20")
Regards
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