I've simulated a simple 4T Pinned Photodiode image sensor through Silvaco TCAD simulator, troubled by 2 problems:
1- I don't know if the FD (Floating Diffusion) contact touches the semiconductor or is isolated by oxide and just read the voltage of FD?
2- How can I extract dark current from a pixel in simulation? which one of the currents, PPD (which in not accessible in measurement), or FD contact (if it touches the semiconductor), or somewhere else is representation of the dark current? Could anyone please help me find the method extracting dark current form the pixel?
Sincerely,
Liquid Crystal Capacitance Model-In order to simulate transient behavior of the unit pixel in MixedMode, a time and voltage dependent liquid crystal capacitance model is to be used.
coding example-
#include
#include
double my_lc_rc(double v, double temp, double ktq, double time, double *curr, double *didv, double *cap, double *charge)
{
double eps,e0;
double epl,clc;
double theta,gamma;
double Dtime;
double vc;
double L,W,D;
L=152;
W=148;
Dtime=100e-3;
theta=51.0; /* sec */
gamma=51.2e-3; /* sec */
epl=3.1;
vc=1.887;
D=10.02;
e0 = 8.854e-12;
if(v > vc)
eps = epl + theta*gamma*exp(Dtime)*sqrt(v/vc - 1.0);
else if( v
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