Hello, The great doctors and professors of the Research Gate.
I have a problem with PR removal.
After etching Nb with RIE, I'm putting it in an 80-degree NMP solution to remove the remaining PR, but it doesn't remove well. I think it's because the PR is burning.
The problem is that the substances are Al, Nb, and SiOx on the wafer, so it is difficult to use other solutions. Al is so weak to other chemical solutions. So I can't find any other effective solution for PR removal except Al.
Trying to remove burning PR with O2 + Ar plasma using RIE (200 W, 400 V, O2 40 SCCM, Ar 10 SCCM, 300 mTorr 200's) but it doesn't remove well, It remains dark point scum, like a dot pattern.
"How do you solve it, sir?"!!?? Please comment!!
Thank you for reading!
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