I think best you can do is avoid preparing the sample substrate large in numbers....use proper condition of desiccator with silicon beads. plan your activity and make exposer time as less as possible....

Finish with a dilute HF etch. That gives you a Si-H surface termination which is stable for some time - 30mins at least. You can check by dipping it in water again - if it's still hydrophobic, the oxide has not re-formed yet.

@Jai Shree Bhardwaj,

You could let the mechanical workshop to make a vacuum sealed fly pan, which is a great to transfer your substrates easily. The vacuum sealed flying pan can be filled with an inert gas or vacuum using a pump.

Hey Xuhua Wang ,

Your answer was simply awesome. I had similar problem. But, in this case I used N2 gas, again I couldn't prevent oxidation at some percentage level. Could you pls help me out the technique vacuum sealed flying pan? What is that exactly means?

Dear Mathu Sridharpanday,

A flying pan could be a box size to hold your samples. It is easier for a workshop to make a round one with sealed rubber and a vacuum inlet/outlet valve. The pan could be filled with nitrogen gas rather vacuum to protect your samples better.

Hope it is clear.

Thanks Xuhua Wang . Since I am entered into the project of Si wafer handling. I struggled a lot mam. I've done already the process you just said like the kept inside the desiccator and purge N2 gas, right? Correct me If I am wrong. I have two main concerns;

1.If we take it out of the pan again, an oxide layer may form onto silicon wafer. Will this happen?

2. Otherwise, does it mean that if we treat it with nitrogen, it will form a protective layer, ensuring that it no longer undergoes oxidation?

@Mathu Sridharpanday,

The samples would be in a sealed nitrogen environment. It is very good for transporting samples using the way i suggested.