I would like to use broad ion beam milling to carefully polish an (already standard polished) Si wafer. I am wondering which settings are best for this, the idea is that the pristine surface quality is retained to be able to for example still perform EBSD at high sensitivity.
Does anyone have any experience/tips for broad ion beam milling of Si wafer?
Grzegorz Cios We have a new stand-alone ion source, not generally known. Let's assume it has an energy range from 3-10kV, with any incidence angle possible.
you can make use of this book
Microelectronics Fialure Analysis Desk Reference, Seventh Edition by Tejinder Gandhi
also this attachment
It strongly depends on the wafer square you want to polish due to inhomogeneous ion beam density distribution across the wafer. Normally you can polish about 10 mm2 by a borad ion beam system in homogeneous way.
Hi, this may be of interest to you.
https://www.osti.gov/servlets/purl/1140408