I want to model uniform donor type defects in the material throughout the bandgap in Silvaco. There are some examples for Gaussian and exponential defects in the Atlas manual, but I couldn't find anything related to model uniform defects.
Please help me for the same.
Dear Shikha Marwaha ,
You can choose the parameters of the exponential distribution to represent flat distribution of the density of the interface sates by setting the the coefficient of the exponential term equal zero.
assume that you have Nt= Nto exp -alpha E,
If you set alpha=0 then you get Nt= Nto.
However, may be there is a syntax for such distribution. You must refer to the manual of the simulator.
Best wishes
Dear Abdelhalim abdelnaby Zekry
Thankyou for your answer. However, my requirement is say that if the bandgap is 4eV, I want 10 donor type defect levels distributed uniformly throughout the bandgap. What should be the Silvaco code for the same?
Dear Shikha Marwaha ,
I do not know if there is a delta function distribution delta(E-Eti),
where Eti can take the values you intend. You can also assign them the concentration you need.
If there is no such function you can choose the Gaussian distribution function
Nti exp (E-Eti)^2/sigma^2
with sigma very small to mimic approximately the single level traps.
Best wishes
Dear Shikha Marwaha ,
There is no physical meaning of a uniform impurity distribution in the band gap of a semiconductor. You can only add discrete impurity levels in the gap or a density of impurity states distribution (such as Gaussian) in such a very wide gap semiconductor (or insulator!). Good luck. The code is available in Silvaco examples: https://silvaco.com/examples/tcad/index.html
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