The values of the relative dielectric constants for silicon/GaAs and other semiconductors are well known (11.9/12.9/etc.). They are used in static calculations (such as deplition region, currents, etc.) in all semiconductor courses.
My question is, what is the origin of these values (DC/zero-frequancy dielectric constants)?
Can I mesure the dielectric constant directly or is it an extrapolation of some model?
# For example, extrapolate various models to zero frequency gives infinity
I think that's what you are looking for:
http://www.newelectronics.co.uk/electronics-technology/six-techniques-for-measuring-dielectric-properties/152591/
I think the good start for you will be the attache article:
Seeger, K., 1988. Microwave dielectric constants of silicon, gallium arsenide, and quartz. Journal of applied physics, 63(11), pp.5439-5443.
I think all of these techniques are for measuring the frequency dependent dielectric constant, not the DC.
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