I tried to etch the oxide layer using RIE(4sccm:26sccm, O2: CF4, 50W, 15 mins), however i obtained uneven etched oxide layer. Thus, there is gradient of etch profile (thickness, and roughness) from edge to the middle. If there is any method that suitable, that will be really helpful. thanks!
Achieving even etching of an oxide layer on a Si/SiO substrate using RIE can be challenging, especially if the process conditions are not optimized.
Here are some suggestions that may help improve the uniformity of the etch:
By optimizing the RIE process parameters and using appropriate techniques, it may be possible to achieve a more uniform etch profile for your SiO/Si substrate.
Read this articles:
The first knob to tune should be the power setting: if possible, try to increase it noticeably and see if the roughness decreases.
Please make sure your substrate (or sample) is uniformly and reliably cooled during the process. A temperature inhomogeneity could result to the thickness gradient.
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