I am facing trouble in making a simple perovskite diode in order to study the deep level traps of the perovskite semiconductor layer. Since the properties of perovskite layer are needed to be studied only.... therefore I am not planing to the include HTL and ETL layers in the diode configuration. So far I have tried to deposit silver and gold metal contact directly on top of the perovskite layer (complete configuration: glass/ITO/Perovskite/Silver or gold metal contact), but this configuration happens to be really bad diode with poor rectification behavior. To my knowledge the silver and gold metal contacts start reacting with the iodine present in the perovskite layer. On the other hand, mechanically stacking a metal contact on top of the perovskite layer leads to a really poor metal/perovskite interface. Would be thankful for any suggestion related to the above mentioned problem. Thank you.
Kind Regards
Mike.
How about lateral contacts with ITO ? What study are u looking forward to do to find deep traps ? Is it capacitance measurements ?
Its deep level transient spectroscopy (DLTS)... but we are also carrying out C-V measurements as well.
I think DLTS can be done on the full device. having a p and n contact with high carrier densities should be OK. I wanted to do DLTS for so long as well..Do you have the setup ?
You may also consider doing admittance spectroscopy to find out location and density of deep traps. We have some interesting results with lead free perovskites in this paper - Article Doping and Switchable Photovoltaic Effect in Lead‐Free Perov...
Harikesh P C Yeh we have a system in place for DLTS measurements. Apart from that, we can also perform capacitance, admittance and Optical-DLTS measurements. Send us some PSC samples if you want them to be characterized using techniques like DLTS, ODLTS etc.
We already have carried out the DLTS measurements for the PSCs.... however we want to look at the properties related to perovskite layer only and thus require a perovskite based diode to be fabricated.
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