Dear all, I am quite new to Sentaurus TCAD.

I built a simple geometry based on a SiC-4H substrate and an epitaxial layer with a pn junction. I placed the cathode on the highly doped substrate and an anode on top of the p+ region.

Anode and cathode are defined as edge contacts and the geometry is a 2D geometry.

I wrote the following sdevice command file to get the IV curve in reverse bias for evaluating the breakdown potential.

The simulation converges and finishes successfully but when plotting the IV curve (cathode-outerVoltage as X and anode-TotalCurrent as Y) I get something like the plot in the attached figure.

Thanks

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Electrode {

{ Name= "anode" Voltage= 0.0 }

{ Name= "cathode" Voltage= 0.0 }

}

Physics{

Temperature=300.

Fermi

DefaultParametersFromFile

Mobility(DopingDependence HighFieldSaturation)

Aniso ( direction(SimulationSystem)=(1 0 0 ) )

Recombination(SRH Auger Avalanche(Hatakeyama ElectricField)) EffectiveIntrinsicDensity( OldSlotboom )

Aniso(Mobility Poisson Avalanche direction(SimulationSystem)=(1 0 0))

}

Math {

CoordinateSystem { UCS }

Cylindrical(yAxis=0.0)

Extrapolate

RelErrControl

Number_of_threads = 4

ExitOnFailure

CheckUndefinedModels

Notdamped= 40

Iterations = 30

Digits=5

ErrEff(electron)= 1e-2

ErrEff(hole)= 1e-2

RHSmin=1e-30

RHSmax= 1e30

RHSFactor= 1e120

CDensityMin=1e-20

ElementVolumeAvalanche

ComputeIonizationIntegrals(

-PathReflection()

MinElectricField=3.5e5

SaveEIonIntegralPaths = 100

SaveHIonIntegralPaths = 100

)

}

Solve {

QuasiStationary (

InitialStep=0.05 MinStep=0.0001 MaxStep=0.01 Increment=1.5

Goal{ Voltage=100 Name="cathode"}

) { Coupled (iterations=8, notdamped=15) { Poisson}

Plot(FilePrefix="inv" NoOverWrite

Time=(0;0.1;0.2;0.3;0.4;0.5;0.6;0.7;0.8;0.9;1)

)

}

}