Hello. Currently I'm studying about HZO-based electric devices.

During the fabrication process, i should etch a particular HZO layer area on the device.

So, i got an etch mask to select the area using photoresist and etched HZO layer by reactive ion etching.

However, HZO etching is typically performed by Cl-based gas and ICP, but i can't utilize it due to the absence of the equipment.

Thus, I have a question. Has anyone tried to etch HZO layer by exploiting RIE and Ar, SF6, CF4, O2 gases?