Dear Sarah Bebiche,

Without direct imaging the dislocations by using TEM, (SEM would not be), it is possible to have potential indications using XRD.

Let me know, If you need a potential paper, let me know ?

Thanks

regrads

Engin

Dislocation density may estimated based on the peak broadening of XRD pattern using conventional Williamson-Smallman equation. More advanced technique is introduced by Prof. Matteo Leoni using WPPM technique. large number of data of the scanned pattern must be obtained ( long time of scanning). you can find more about this by using google search. A good software must be used such as Topas , HSP. The most important thing is to correct the instrumental broadening.

Best regards

Among the XRD techniques I recommend X-Ray Topograhy (Lang Cameras) which yields images (rather than spectra) of silicon where dislocations appear as lines. It is possible to determine their character edge/screw and growth mechanisms e.g. by climbing. This was the case of a study by Servidori and myself (phys.stat.sol. 1975 and related papers) on P-diffused Si where the images of dislocations and dots ( identified as agglomerations of precipitates) were compared though at a different scale with the corresponding TEM images