I' m considering building integrated LEDs on a standard CMOS technology.
What I do know: I can modify the bandgap energy if I use quantum dots in the range of 2..5nm.
What I need to learn:
How can I create an LED with such quantum dots. (Is it sufficient to simply create a PN junction that is only 2..5nm wide?)
Who can recommend literature how to calculate energy and momentum of the electrons is such quantum dots.
Dear Ricardo Erckert,
The emergence of quantum dot (QD) materials is expected to fill this gap due to their remarkable photoluminescence, narrow bandwidth emission, colour tuneability, high quantum yield and nanoscale size, providing a powerful full-colour solution for μ-LED displays.
https://www.nature.com/articles/s41377-020-0268-1
One may get a bit of near-IR and visible light in avalanche silicon breakdown e.g. you can observe it by eye when getting significant breakdown current in Silicon Photomultipliers. Perhaps it can be enhanced by some means.
Thanks for the overview Article of Quantum dot LEDs.
Looks like I have to add more precision to my question:
I don't want to use a III-V semiconductor and enhance it with quantum dots. I want to use Silicon itself and manipulate the bandgap by micro-structuring the silicon.
I have seen a publication of Frauenhofer Institute where the described using silicon pillars some nm wide to make silicon emit light. But unfortunately I don't have any further details.
Using avalanche Bremsstrahlung is an option I'm not really convinced of. Avalanching is destructive for the lattice and leads to fast aging of the components. I don't think a device based on avalaching will survive 10000h or more of operation.
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