I have taken ToF-SIMS profile of boron and phosphorus in silicon film grown on silicon substrate. I have used diffusion furnace for boron and phosporus diffusion. Please see the sample curve I have received from the measurement. I tried using
Concentration of Boron = RSF(Boron) * (Intensity of boron)/Itensity of si) formula. Is it correct? But how can I get the other values, I know only the intensity of boron from the curve?
Regards
Abul
I think you need to calibrate your setup by taking films with known boron concentration and measure for them the secondary boron ion count per second.
This may be the most staight forward method to solve this problem.
Best wishes
I think you need to calibrate your setup by taking films with known boron concentration and measure for them the secondary boron ion count per second.
This may be the most staight forward method to solve this problem.
Best wishes
Hi, Abul Hossion.
The typical SIMS depth profile includes measurement at the same time intensities of matrix element and interesting element. RSF for B in Si you can find in the literature (Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis, 1st Ed., Robert G. Wilson, Fred A. Stevie, Charles W. Magee), but both intensities (of interesting element and matrix element) are your experimental data.
Dear Zekry,
I have taken the reference boron concentration using the same instrument and compared both data to find the conversion factor. But the reviewer from Material Science in Semiconductor Processing mentioned 'it is meaningless'. Using RSF for calibration of SIMS is must.
regards
Abul
Dear Yuriy Sir,
I have the RSF in B using oxygen+ is 3.2E25, and in P using Cs+ is 1.1E23.
Please help me to interpret the two graph that I have received from ToF-SIMS instrument in the attachment. Which one is the matrix element?
regards
Abul
Yuriy Kudriavtsev
Hi Abul,
These data don't include Si ions intensity (Si+ for oxygen sputtering, and Si- for cesium sputtering). So, you need ask SIMS operator about Si ions intensities for both profiles. It could be a constant value or profiles. In first case you should divide B and P intensities on the Si intensity value and multiply on RSF you have. If you will have profiles, you need divide point by point intensities of B and P on Si intensity and multiply on factors. It's easy. But without Si+- intensities you cannot do anything.
Regards,
yu.
PS. Or, please, ask SIMS operator, who made the analysis, for which matrix ion signal the RSFs were calculated.
Dear Yuriy Sir,
I have received these two .txt files regarding the ToF SIMS measurement from the ToF-SIMS operator.
I will be grateful if you can help me, if these files are useful. It seems there are more column.
Regards
Abul,
Yuriy Kudriavtsev
- Badges
- Science topic
- Similar topics
- Chemistry
- Nanotechnology
- Nanostructures
- Thin Films