There is different recombination mechanisms. However, the dominant for silicon as indirect band gap material is recombination via recombination centers which are deep lying allowed electronic states near the middle of the band gap. This mechanism is called the Shockley Read Hall recombination mechanism. The rate depends on the electron concentration n, the hole concentration, the trap density Nt and their trap level Et.

As an approximation one can consider that the recombination rate = delta p/Tau , where delta p is the excess electron concentration which is equal to the excess electron concentration delta n and Tau is the minority carrier lifetime.

For more information about the recombination in semiconductor please follow the link:Book Electronic Devices

Best wishes

In AFORS-HET, you can check in the cell results in the lower right window the generation and the recombination. A value for the integrated current can be found in the bottom of the spectra window.

Hello Jan, we can discuss on monday.