I place different doping on X axis and get the following curves of efficiency parameters can someone body explain its behavior that why this increase and decrease come
Can you provide more context for the graphs? Background about what is plotted, and axis labels/explanations, would be critical.
Eric W. Bridgeford ok actually x axis represent the doping and i bring variation in x axis doping of amorphous silicon which is the top layer of HIT cell
Dear Naveed,
The doping of the amorphous top layer increases the contact difference of potential and thereby decreases the back injection from the i-layer and therefore decreases the reverse saturation current, This would increase the the open circuit voltage.
It also enhances the fill factor as the fill factor improves with a decrease in the reverse saturation current. In addition the top layer resistance will decrease leading to enhancing the fill factor.
The increase of the photocurrent with doping is due to decrease in the bandgap of the amorphous material with doping which may lead to absorption of more incident solar radiation. The decrease of Iph at higher doping is due to lowering the minority carrier lifetime with doping leading to more recombination losses.
Best wishes
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