How to avoid the melt-back etching when GaN grown on striped Si?

04 April 2016 1 7K Report

I have grown GaN on stripe patterned Si substrate by MOCVD with 100nm AlN buffer. But the melt-back etching easily happened when GaN growth tempetature above 1000oC.

However, some other groups also reported GaN grown on patterned Si at high growth temperature without melt-back etching, shown in the links.

How can I grown GaN on patterned Si at high growth temperature but without melt-back etching? Is the melt-back etching also related to patterned Si fabrication or cleaning before MOCVD growth?

http://www.sciencedirect.com/science/article/pii/S0022024809000669

http://scitation.aip.org/content/aip/journal/apl/78/6/10.1063/1.1347013

http://www.sciencedirect.com/science/article/pii/S002202480201864X

Chao Liu

Do you have cross-sectional SEM image for the 100 nm AlN on patterned Si?

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